? semiconductor components industries, llc, 2001 july, 2001 rev. 1 1 publication order number: ntd4n60/d ntd4n60 preferred device advance information power mosfet 4 amps, 600 volts nchannel dpak designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. features ? higher current rating ? lower r ds(on) ? lower capacitances ? lower total gate charge ? tighter v sd specifications ? avalanche energy specified ? industry standard dpak surface mount package typical applications ? switch mode power supplies ? pwm motor controls ? converters ? bridge circuits maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit drainsource voltage v dss 600 vdc draingate voltage (r gs = 1.0 m w ) v dgr 600 vdc gatesource voltage continuous nonrepetitive (t p 10 ms) v gs v gsm 20 40 vdc drain continuous continuous @ 100 c single pulse (t p 10 m s) i d i d i dm 4.0 3.0 14 adc total power dissipation derate above 25 c total power dissipation @ t c = 25 c p d 96 0.77 1.75 watts w/ c w/ c operating and storage temperature range t j , t stg 55 to 150 c single draintosource avalanche energy starting t j = 25 c (v dd = 100 v, v gs = 10 vdc, i l = 4 a, l = 10 mh, r g = 25 w ) e as 80 mj thermal resistance junctiontocase junctiontoambient junctiontoambient (note 1.) r q jc r q ja r q ja 1.30 100 71.4 c/w maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c 1. when surface mounted to an fr4 board using the minimum recommended pad size. this document contains information on a new product. specifications and information herein are subject to change without notice. 4 amperes 600 volts r ds(on) = 2400 m w device package shipping ordering information ntd4n60 dpak 75 units/rail case 369a dpak (bent lead) style 2 marking diagrams & pin assignments http://onsemi.com nchannel d s g 4n60 = device code y = year ww = work week t = mosfet yww t 4n60 1 2 3 4 1 gate 3 source 2 drain 4 drain ntd4n601 dpak straight lead 75 units/rail ntd4n60t4 dpak 2500 tape & reel case 369 dpak (straight lead) style 2 yww t 4n60 1 gate 3 source 2 drain 4 drain 1 2 3 4 preferred devices are recommended choices for future use and best overall value.
ntd4n60 http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics draintosource breakdown voltage (v gs = 0 vdc, i d = 0.25 madc) temperature coefficient (positive) v (br)dss 600 700 vdc mv/ c zero gate voltage collector current (v ds = 600 vdc, v gs = 0 vdc) (v ds = 600 vdc, v gs = 0 vdc, t j =125 c) i dss 10 100 m adc gatebody leakage current (v gs = 20 vdc, v ds = 0) i gss(f) i gss(r) 100 100 nadc on characteristics (note 2.) gate threshold voltage i d = 0.25 ma, v ds = v gs temperature coefficient (negative) v gs(th) 2.0 2.7 6.0 4.0 vdc mv/ c static draintosource onresistance (v gs = 10 vdc, i d = 2 adc) r ds(on) 2100 2400 mohm draintosource onvoltage (v gs = 10 vdc, i d = 4 adc) (v gs = 10 vdc, i d = 2 adc, t j = 125 c) v ds(on) 11.5 10.5 vdc forward transconductance (v ds = 15 vdc, i d = 2 adc) g fs 0.7 3.8 mhos dynamic characteristics input capacitance (v 25 vd v 0 vd c iss 540 760 pf output capacitance (v ds = 25 vdc, v gs = 0 vdc, f = 1.0 mhz ) c oss 125 180 transfer capacitance f = 1 . 0 mhz) c rss 8.0 20 switching characteristics (note 3.) turnon delay time t d(on) 12 20 ns rise time (v dd = 300 vdc, i d = 4 adc, v gs =10vdc t r 7.0 10 turnoff delay time v gs = 10 vdc, r g = 9.1 w ) t d(off) 19 40 fall time r g 9.1 w ) t f 10 20 gate charge q t 5.0 10 nc (v ds = 480 vdc, i d = 4 adc, q 1 2.7 (v ds 480 vdc , i d 4 adc , v gs = 10 vdc) q 2 2.0 q 3 6.0 sourcedrain diode characteristics forward onvoltage (note 2.) (i s = 4 adc, v gs = 0 vdc) (i s = 4 adc, v gs = 0 vdc, t j = 125 c) v sd 0.86 0.75 1.0 vdc reverse recovery time t rr 655 ns (i s 4 adc v gs 0 vdc t a 103 (i s = 4 adc, v gs = 0 vdc, di s /dt = 100 a/ m s) t b 552 reverse recovery stored charge di s /dt = 100 a/ m s) q rr 1.9 m c 2. pulse test: pulse width 300 m s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperature.
ntd4n60 http://onsemi.com 3 package dimensions style 2: pin 1. gate 2. drain 3. source 4. drain d a k b r v s f l g 2 pl m 0.13 (0.005) t e c u j h t seating plane z dim min max min max millimeters inches a 0.235 0.250 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.033 0.040 0.84 1.01 f 0.037 0.047 0.94 1.19 g 0.180 bsc 4.58 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.102 0.114 2.60 2.89 l 0.090 bsc 2.29 bsc r 0.175 0.215 4.45 5.46 s 0.020 0.050 0.51 1.27 u 0.020 --- 0.51 --- v 0.030 0.050 0.77 1.27 z 0.138 --- 3.51 --- notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 123 4 dpak case 369a13 issue aa
ntd4n60 http://onsemi.com 4 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. style 2: pin 1. gate 2. drain 3. source 4. drain 123 4 v s a k t seating plane r b f g d 3 pl m 0.13 (0.005) t c e j h dim min max min max millimeters inches a 0.235 0.250 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.033 0.040 0.84 1.01 f 0.037 0.047 0.94 1.19 g 0.090 bsc 2.29 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.350 0.380 8.89 9.65 r 0.175 0.215 4.45 5.46 s 0.050 0.090 1.27 2.28 v 0.030 0.050 0.77 1.27 dpak case 36907 issue m on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. ntd4n60/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 8002829855 toll free usa/canada
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